irf7507 pd - 91269i l generation v technology l ultra low on-resistance l dual n and p channel mosfet l very small soic package l low profile (<1.1mm) l available in tape & reel l fast switching hexfet ? power mosfet n-ch p-ch v dss 20v -20v r ds(on) 0.135 w 0.27 w 12/1/98 micro8 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. description d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 n-channel mosfet p-channel mosfet www.irf.com 1 parameter max. units n-channel p-channel v ds drain-source voltage 20 -20 v i d @ t a = 25c continuous drain current, v gs 2.4 -1.7 i d @ t a = 70c continuous drain current, v gs 1.9 -1.4 a i dm pulsed drain current ? 19 -14 p d @t a = 25c maximum power dissipation ? 1.25 w p d @t a = 70c maximum power dissipation ? 0.8 w linear derating factor 10 mw/c v gs gate-to-source voltage 12 v v gsm gate-to-source voltage single pulse tp<10s 16 v dv/dt peak diode recovery dv/dt ? 5.0 -5.0 v/ns t j , t stg junction and storage temperature range -55 to + 150 c soldering temperature, for 10 seconds 240 (1.6mm from case) thermal resistance parameter max. units r q ja maximum junction-to-ambient ? 100 c/w absolute maximum ratings
irf7507 2 www.irf.com parameter min. typ. max. units conditions n-ch 20 v gs = 0v, i d = 250a p-ch -20 v gs = 0v, i d = -250a n-ch 0.041 reference to 25c, i d = 1ma p-ch -0.012 reference to 25c, i d = -1ma 0.085 0.14 v gs = 4.5v, i d = 1.7a ? 0.120 0.20 v gs = 2.7v, i d = 0.85a ? 0.17 0.27 v gs = -4.5v, i d =-1.2a ? 0.28 0.40 v gs = -2.7v, i d =-0.6a ? n-ch 0.7 v ds = v gs , i d = 250a p-ch -0.7 v ds = v gs , i d = -250a n-ch 2.6 v ds = 10v, i d = 0.85a ? p-ch 1.3 v ds = -10v, i d = -0.6a ? n-ch 1.0 v ds = 16 v, v gs = 0v p-ch -1.0 v ds = -16v, v gs = 0v n-ch 25 v ds = 16 v, v gs = 0v, t j = 125c p-ch -25 v ds = -16v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage n-p CC 100 v gs = 12v n-ch CC 5.3 8.0 p-ch 5.4 8.2 n-ch CC 0.84 1.3 p-ch 0.96 1.4 n-ch CC 2.2 3.3 p-ch 2.4 3.6 n-ch 5.7 p-ch 9.1 n-ch 24 p-ch 35 n-ch 15 p-ch 38 n-ch 16 p-ch 43 n-ch 260 p-ch 240 n-ch 130 pf p-ch 130 n-ch 61 p-ch 64 v (br)dss drain-to-source breakdown voltage d v (br)dss / d t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 21 ) notes: ? n-channel i sd 1.7a, di/dt 66a/s, v dd v (br)dss , t j 150c p-channel i sd -1.2a, di/dt 100a/s, v dd v (br)dss , t j 150c parameter min. typ. max. units conditions n-ch 1.25 p-ch -1.25 n-ch 19 p-ch -14 n-ch 1.2 t j = 25c, i s = 1.7a, v gs = 0v ? p-ch -1.2 t j = 25c, i s = -1.2a, v gs = 0v ? n-ch 39 59 p-ch 52 78 n-ch 37 56 p-ch 63 95 electrical characteristics @ t j = 25c (unless otherwise specified) source-drain ratings and characteristics v v/c w v s a nc ns n-channel i d = 1.7a, v ds = 16v, v gs = 4.5v ? p-channel i d = -1.2a, v ds = -16v, v gs = -4.5v n-channel v dd = 10v, i d = 1.7a, r g = 6.0 w, r d = 5.7 w ? p-channel v dd = -10v, i d = -1.2a, r g = 6.0 w , r d = 8.3 w n-channel v gs = 0v, v ds = 15v, ? = 1.0mhz ? p-channel v gs = 0v, v ds = -15v, ? = 1.0mhz n-ch p-ch i s continuous source current (body diode) i sm pulsed source current (body diode) ? v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge a v ns nc n-channel t j = 25c, i f = 1.7a, di/dt = 100a/s p-channel ? t j = 25c, i f = -1.2a, di/dt = -100a/s ? pulse width 300s; duty cycle 2%. ? surface mounted on fr-4 board, t 10sec.
irf7507 www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 2. typical output characteristics fig 4. typical source-drain diode forward voltage fig 5. normalized on-resistance vs. temperature fig 6. typical on-resistance vs. drain current n - channel 0.01 0.1 1 10 100 0.1 1 10 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds 20s pulse width t = 25c a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v j 0.01 0.1 1 10 100 0.1 1 10 i , d rain-to-source current (a) d v , drain-to-source voltage (v) ds a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v 20s pulse width t = 150c j 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 1 0 v 20s pulse w idth ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = 4.5v gs i = 1.7a d 0.0 0.2 0.4 0.6 0.8 0246 a i , drain current (a) d v = 2.5v gs v = 5.0v gs r ds(on) , drain-to-source on resistance
irf7507 4 www.irf.com fig 8. maximum safe operating area fig 9. typical capacitance vs. drain-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage fig 7. typical on-resistance vs. gate voltage n - channel 0.05 0.07 0.09 0.11 0.13 2345678 a r , d ra in-to -s ou rce o n r esista nce ds(on) (w gs v , g ate-to-source voltage (v) i = 2.4a d 0 100 200 300 400 500 1 10 100 c, capacitance (pf) ds v , drain-to-source volta g e (v) a v = 0v, f = 1m h z c = c + c , c sho r te d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total g ate charge (nc) for test circuit se e fig ure 9 i = 1.7a v = 16v d ds 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irf7507 www.irf.com 5 fig 11. typical output characteristics fig 13. typical transfer characteristics fig 12. typical output characteristics fig 14. typical source-drain diode forward voltage fig 15. normalized on-resistance vs. temperature fig 16. typical on-resistance vs. drain current p - channel 0.01 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.5v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v 0.01 0.1 1 10 100 0.1 1 10 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -1 0 v 20s pulse w idth ds 0.01 0.1 1 10 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -1.2a v = -4.5v d gs 0.0 0.5 1.0 1.5 2.0 0.0 0.2 0.4 0.6 0.8 1.0 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -2.5v vgs = -5.0v
irf7507 6 www.irf.com fig 18. maximum safe operating area fig 17. typical on-resistance vs. gate voltage p - channel fig 20. typical gate charge vs. gate-to-source voltage fig 19. typical capacitance vs. drain-to-source voltage fig 21. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) n-p - channel 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0 100 200 300 400 500 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e (v) v = 0v, f = 1m hz c = c + c , c sho rted c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , g ate-to-source voltage (v) q , total g ate c harge (nc ) i = -1.2a v = -16v for test circuit see figure 19 d ds 2 3 4 5 6 7 8 0.100 0.150 0.200 0.250 0.300 r , drain-to-source on resistance -v , gate-to-source voltage (v) gs ds (on) id = -1.7a
irf7507 www.irf.com 7 package outline micro8 outline dimensions are shown in millimeters (inches) micro8 part marking information part number 451 7501 top example : this is an irf7501 a date code (yww) y = last dig it o f year ww = week inc hes millim eters min m ax m in max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x q notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 c o n tr o llin g d im e n sio n : in c h . 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 q 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x
irf7507 8 www.irf.com tape & reel information micro8 dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 12/98
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